RF burn-in of dielectric-charging characteristics of micro-electromechanical capacitive switches
Allbwn ymchwil: Cyfraniad at gynhadledd › Papur
Fersiynau electronig
Dangosydd eitem ddigidol (DOI)
We report, for the first time, the benefit of RF burn-in at power levels significantly higher than the nominal handling capacity of micro-electromechanical capacitive switches. The benefit appears to be permanent, so that, after burn-in, the switches remain less vulnerable to dielectric charging and, presumably, more reliable. It was speculated that high RF power permanently changed the bond configuration of the silicon-dioxide dielectric, which prevented charge injection under DC bias. Obviously, more detailed study is needed to elucidate the detailed burn-in mechanism. However, this initial result is very encouraging and can facilitate the application of these switches in many RF systems.
| Iaith wreiddiol | Saesneg |
|---|---|
| Tudalennau | 1-3 |
| Dynodwyr Gwrthrych Digidol (DOIs) | |
| Statws | Cyhoeddwyd - 17 Meh 2012 |
| Digwyddiad | Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012 - Hyd: 3 Ion 0001 → … |
Cynhadledd
| Cynhadledd | Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012 |
|---|---|
| Cyfnod | 3/01/01 → … |