RF burn-in of dielectric-charging characteristics of micro-electromechanical capacitive switches
Research output: Contribution to conference › Paper
Electronic versions
DOI
We report, for the first time, the benefit of RF burn-in at power levels significantly higher than the nominal handling capacity of micro-electromechanical capacitive switches. The benefit appears to be permanent, so that, after burn-in, the switches remain less vulnerable to dielectric charging and, presumably, more reliable. It was speculated that high RF power permanently changed the bond configuration of the silicon-dioxide dielectric, which prevented charge injection under DC bias. Obviously, more detailed study is needed to elucidate the detailed burn-in mechanism. However, this initial result is very encouraging and can facilitate the application of these switches in many RF systems.
| Original language | English |
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| Pages | 1-3 |
| DOIs | |
| Publication status | Published - 17 Jun 2012 |
| Event | Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012 - Duration: 3 Jan 0001 → … |
Conference
| Conference | Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012 |
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| Period | 3/01/01 → … |