RIN Properties of intersubband semiconductor lasers
Allbwn ymchwil: Cyfraniad at gynhadledd › Papur
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RIN Properties of intersubband semiconductor lasers. / Mustafa, N.; Pesquera, L.; Shore, K.A.
2000. Papur a gyflwynwyd yn NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France..
2000. Papur a gyflwynwyd yn NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France..
Allbwn ymchwil: Cyfraniad at gynhadledd › Papur
HarvardHarvard
Mustafa, N, Pesquera, L & Shore, KA 2000, 'RIN Properties of intersubband semiconductor lasers', Papur a gyflwynwyd yn NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France., 3/01/01.
APA
Mustafa, N., Pesquera, L., & Shore, K. A. (2000). RIN Properties of intersubband semiconductor lasers. Papur a gyflwynwyd yn NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France..
CBE
Mustafa N, Pesquera L, Shore KA. 2000. RIN Properties of intersubband semiconductor lasers. Papur a gyflwynwyd yn NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France..
MLA
Mustafa, N., L. Pesquera, a K.A. Shore RIN Properties of intersubband semiconductor lasers. NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France., 03 Ion 0001, Papur, 2000.
VancouverVancouver
Mustafa N, Pesquera L, Shore KA. RIN Properties of intersubband semiconductor lasers. 2000. Papur a gyflwynwyd yn NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France..
Author
RIS
TY - CONF
T1 - RIN Properties of intersubband semiconductor lasers
AU - Mustafa, N.
AU - Pesquera, L.
AU - Shore, K.A.
PY - 2000/6/1
Y1 - 2000/6/1
M3 - Paper
T2 - NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France.
Y2 - 3 January 0001
ER -