RIN Properties of intersubband semiconductor lasers
Research output: Contribution to conference › Paper
Standard Standard
RIN Properties of intersubband semiconductor lasers. / Mustafa, N.; Pesquera, L.; Shore, K.A.
2000. Paper presented at NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France..
2000. Paper presented at NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France..
Research output: Contribution to conference › Paper
HarvardHarvard
Mustafa, N, Pesquera, L & Shore, KA 2000, 'RIN Properties of intersubband semiconductor lasers', Paper presented at NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France., 3/01/01.
APA
Mustafa, N., Pesquera, L., & Shore, K. A. (2000). RIN Properties of intersubband semiconductor lasers. Paper presented at NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France..
CBE
Mustafa N, Pesquera L, Shore KA. 2000. RIN Properties of intersubband semiconductor lasers. Paper presented at NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France..
MLA
Mustafa, N., L. Pesquera, and K.A. Shore RIN Properties of intersubband semiconductor lasers. NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France., 03 Jan 0001, Paper, 2000.
VancouverVancouver
Mustafa N, Pesquera L, Shore KA. RIN Properties of intersubband semiconductor lasers. 2000. Paper presented at NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France..
Author
RIS
TY - CONF
T1 - RIN Properties of intersubband semiconductor lasers
AU - Mustafa, N.
AU - Pesquera, L.
AU - Shore, K.A.
PY - 2000/6/1
Y1 - 2000/6/1
M3 - Paper
T2 - NATO, Advanced Research Workshop THz Sources and Systems, Toulouse, France.
Y2 - 3 January 0001
ER -