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Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures

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Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures. / Kalbitz, R.; Frubing, P.; Gerhard, R. et al.
Yn: Applied Physics Letters, Cyfrol 98, Rhif 3, 01.01.2011, t. 033303.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

HarvardHarvard

Kalbitz, R, Frubing, P, Gerhard, R & Taylor, DM 2011, 'Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures', Applied Physics Letters, cyfrol. 98, rhif 3, tt. 033303. https://doi.org/10.1063/1.3543632

APA

Kalbitz, R., Frubing, P., Gerhard, R., & Taylor, D. M. (2011). Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures. Applied Physics Letters, 98(3), 033303. https://doi.org/10.1063/1.3543632

CBE

Kalbitz R, Frubing P, Gerhard R, Taylor DM. 2011. Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures. Applied Physics Letters. 98(3):033303. https://doi.org/10.1063/1.3543632

MLA

Kalbitz, R. et al. "Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures". Applied Physics Letters. 2011, 98(3). 033303. https://doi.org/10.1063/1.3543632

VancouverVancouver

Kalbitz R, Frubing P, Gerhard R, Taylor DM. Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures. Applied Physics Letters. 2011 Ion 1;98(3):033303. doi: 10.1063/1.3543632

Author

Kalbitz, R. ; Frubing, P. ; Gerhard, R. et al. / Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures. Yn: Applied Physics Letters. 2011 ; Cyfrol 98, Rhif 3. tt. 033303.

RIS

TY - JOUR

T1 - Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures

AU - Kalbitz, R.

AU - Frubing, P.

AU - Gerhard, R.

AU - Taylor, D.M.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.

AB - Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.

U2 - 10.1063/1.3543632

DO - 10.1063/1.3543632

M3 - Article

VL - 98

SP - 033303

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

ER -