Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

Fersiynau electronig

Dangosydd eitem ddigidol (DOI)

  • R. Kalbitz
  • P. Frubing
  • R. Gerhard
  • D.M. Taylor
Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.
Iaith wreiddiolSaesneg
Tudalennau (o-i)033303
CyfnodolynApplied Physics Letters
Cyfrol98
Rhif y cyfnodolyn3
Dynodwyr Gwrthrych Digidol (DOIs)
StatwsCyhoeddwyd - 1 Ion 2011
Gweld graff cysylltiadau