Porth Ymchwil

The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

StandardStandard

The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors. / Itoh, E.; Torres, I.; Taylor, D.M.
Yn: Japanese Journal of Applied Physics, Cyfrol 44, Rhif 1B, 01.01.2005, t. 641-647.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

HarvardHarvard

Itoh, E, Torres, I & Taylor, DM 2005, 'The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors', Japanese Journal of Applied Physics, cyfrol. 44, rhif 1B, tt. 641-647. https://doi.org/10.1143/JJAP.44.641

APA

Itoh, E., Torres, I., & Taylor, D. M. (2005). The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors. Japanese Journal of Applied Physics, 44(1B), 641-647. https://doi.org/10.1143/JJAP.44.641

CBE

Itoh E, Torres I, Taylor DM. 2005. The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors. Japanese Journal of Applied Physics. 44(1B):641-647. https://doi.org/10.1143/JJAP.44.641

MLA

Itoh, E., I. Torres a D.M. Taylor. "The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors". Japanese Journal of Applied Physics. 2005, 44(1B). 641-647. https://doi.org/10.1143/JJAP.44.641

VancouverVancouver

Itoh E, Torres I, Taylor DM. The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors. Japanese Journal of Applied Physics. 2005 Ion 1;44(1B):641-647. doi: 10.1143/JJAP.44.641

Author

Itoh, E. ; Torres, I. ; Taylor, D.M. / The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors. Yn: Japanese Journal of Applied Physics. 2005 ; Cyfrol 44, Rhif 1B. tt. 641-647.

RIS

TY - JOUR

T1 - The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors

AU - Itoh, E.

AU - Torres, I.

AU - Taylor, D.M.

PY - 2005/1/1

Y1 - 2005/1/1

KW - PHYSICS

KW - APPLIED

U2 - 10.1143/JJAP.44.641

DO - 10.1143/JJAP.44.641

M3 - Article

VL - 44

SP - 641

EP - 647

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 1B

ER -