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The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors

Research output: Contribution to journal › Article › peer-review

Standard Standard

The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors. / Itoh, E.; Torres, I.; Taylor, D.M.
In: Japanese Journal of Applied Physics, Vol. 44, No. 1B, 01.01.2005, p. 641-647.

Research output: Contribution to journal › Article › peer-review

HarvardHarvard

Itoh, E, Torres, I & Taylor, DM 2005, 'The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors', Japanese Journal of Applied Physics, vol. 44, no. 1B, pp. 641-647. https://doi.org/10.1143/JJAP.44.641

APA

Itoh, E., Torres, I., & Taylor, D. M. (2005). The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors. Japanese Journal of Applied Physics, 44(1B), 641-647. https://doi.org/10.1143/JJAP.44.641

CBE

Itoh E, Torres I, Taylor DM. 2005. The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors. Japanese Journal of Applied Physics. 44(1B):641-647. https://doi.org/10.1143/JJAP.44.641

MLA

Itoh, E., I. Torres, and D.M. Taylor. "The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors". Japanese Journal of Applied Physics. 2005, 44(1B). 641-647. https://doi.org/10.1143/JJAP.44.641

VancouverVancouver

Itoh E, Torres I, Taylor DM. The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors. Japanese Journal of Applied Physics. 2005 Jan 1;44(1B):641-647. doi: 10.1143/JJAP.44.641

Author

Itoh, E. ; Torres, I. ; Taylor, D.M. / The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors. In: Japanese Journal of Applied Physics. 2005 ; Vol. 44, No. 1B. pp. 641-647.

RIS

TY - JOUR

T1 - The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors

AU - Itoh, E.

AU - Torres, I.

AU - Taylor, D.M.

PY - 2005/1/1

Y1 - 2005/1/1

KW - PHYSICS

KW - APPLIED

U2 - 10.1143/JJAP.44.641

DO - 10.1143/JJAP.44.641

M3 - Article

VL - 44

SP - 641

EP - 647

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 1B

ER -