TY - JOUR

T1 - Etch-free low loss silicon waveguides using hydrogen silsesquioxane oxidation masks

AU - Nezhad, Maziar P.

AU - Bondarenko, Olesya

AU - Khajavikhan, Mercedeh

AU - Simic, Aleksandar

AU - Fainman, Yeshaiahu

PY - 2011/9/26

Y1 - 2011/9/26

N2 - An etch-free fabrication technique for creating low loss silicon waveguides in the silicon-on-insulator material system is proposed and demonstrated. The approach consists of local oxidation of a silicon-on-insulator chip covered with a e-beam patterned hydrogen silsesquioxane mask. A single oxidation step converts hydrogen silsesquioxane to a glass-like compound and simultaneously defines the waveguides, bypassing the need for any wet or dry etching steps. The spectral response of ring resonators fabricated using this technique was used to characterize the waveguide losses. Intrinsic Q-factors as high as 1.57 × 106, corresponding to a waveguide loss of 0.35dB/cm, were measured.

AB - An etch-free fabrication technique for creating low loss silicon waveguides in the silicon-on-insulator material system is proposed and demonstrated. The approach consists of local oxidation of a silicon-on-insulator chip covered with a e-beam patterned hydrogen silsesquioxane mask. A single oxidation step converts hydrogen silsesquioxane to a glass-like compound and simultaneously defines the waveguides, bypassing the need for any wet or dry etching steps. The spectral response of ring resonators fabricated using this technique was used to characterize the waveguide losses. Intrinsic Q-factors as high as 1.57 × 106, corresponding to a waveguide loss of 0.35dB/cm, were measured.

U2 - 10.1364/OE.19.018827

DO - 10.1364/OE.19.018827

M3 - Article

VL - 19

SP - 18827

EP - 18832

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 20

ER -