Etch-free low loss silicon waveguides using hydrogen silsesquioxane oxidation masks
Research output: Contribution to journal › Article › peer-review
Electronic versions
DOI
An etch-free fabrication technique for creating low loss silicon waveguides in the silicon-on-insulator material system is proposed and demonstrated. The approach consists of local oxidation of a silicon-on-insulator chip covered with a e-beam patterned hydrogen silsesquioxane mask. A single oxidation step converts hydrogen silsesquioxane to a glass-like compound and simultaneously defines the waveguides, bypassing the need for any wet or dry etching steps. The spectral response of ring resonators fabricated using this technique was used to characterize the waveguide losses. Intrinsic Q-factors as high as 1.57 × 106, corresponding to a waveguide loss of 0.35dB/cm, were measured.
| Original language | English |
|---|---|
| Pages (from-to) | 18827-18832 |
| Number of pages | 6 |
| Journal | Optics Express |
| Volume | 19 |
| Issue number | 20 |
| Early online date | 13 Sept 2011 |
| DOIs | |
| Publication status | Published - 26 Sept 2011 |