Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask
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DOI
A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-µm wavelength was produced and evaluated.
| Original language | English |
|---|---|
| Pages (from-to) | 2377-2381 |
| Number of pages | 5 |
| Journal | Applied Optics |
| Volume | 44 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 20 Apr 2005 |