Intermodulation distortion in MEMS capacitive switches under high RF power
Research output: Contribution to conference › Paper
Electronic versions
DOI
ntermodulation distortion in MEMS capacitive switches was analyzed both theoretically and experimentally as a function of tone spacing and RF power. The theory and experiment consistently showed that, under high RF power, additional distortion was caused by self-heating of the switch membrane by the RF power, which decreased the membrane spring constant significantly. The results implied that, well before the input RF power triggers self-actuation, the distortion might increase rapidly to an unacceptable level, so that the power-handling capacity of MEMS capacitive switches would be limited by intermodulation distortion instead of self-actuation.
| Original language | English |
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| Pages | 1-3 |
| DOIs | |
| Publication status | Published - 2 Jun 2013 |
| Event | IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013 - Duration: 3 Jan 0001 → … |
Conference
| Conference | IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013 |
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| Period | 3/01/01 → … |