Low-dispersion metamaterial-based phase shifters with reduced size and number of MEMS switches

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Standard Standard

Low-dispersion metamaterial-based phase shifters with reduced size and number of MEMS switches. / Gholizadeh, V.; Asadi, M.J.; Ning, Y. et al.
Wireless Symposium (IWS), 2016 IEEE MTT-S International. 2016.

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

HarvardHarvard

Gholizadeh, V, Asadi, MJ, Ning, Y, Palego, C, Hwang, JCM, Scarbrough, D & Goldsmith, CL 2016, Low-dispersion metamaterial-based phase shifters with reduced size and number of MEMS switches. in Wireless Symposium (IWS), 2016 IEEE MTT-S International. https://doi.org/10.1109/IEEE-IWS.2016.7585412

APA

Gholizadeh, V., Asadi, M. J., Ning, Y., Palego, C., Hwang, J. C. M., Scarbrough, D., & Goldsmith, C. L. (2016). Low-dispersion metamaterial-based phase shifters with reduced size and number of MEMS switches. In Wireless Symposium (IWS), 2016 IEEE MTT-S International https://doi.org/10.1109/IEEE-IWS.2016.7585412

CBE

Gholizadeh V, Asadi MJ, Ning Y, Palego C, Hwang JCM, Scarbrough D, Goldsmith CL. 2016. Low-dispersion metamaterial-based phase shifters with reduced size and number of MEMS switches. In Wireless Symposium (IWS), 2016 IEEE MTT-S International. https://doi.org/10.1109/IEEE-IWS.2016.7585412

MLA

VancouverVancouver

Gholizadeh V, Asadi MJ, Ning Y, Palego C, Hwang JCM, Scarbrough D et al. Low-dispersion metamaterial-based phase shifters with reduced size and number of MEMS switches. In Wireless Symposium (IWS), 2016 IEEE MTT-S International. 2016 doi: 10.1109/IEEE-IWS.2016.7585412

Author

Gholizadeh, V. ; Asadi, M.J. ; Ning, Y. et al. / Low-dispersion metamaterial-based phase shifters with reduced size and number of MEMS switches. Wireless Symposium (IWS), 2016 IEEE MTT-S International. 2016.

RIS

TY - GEN

T1 - Low-dispersion metamaterial-based phase shifters with reduced size and number of MEMS switches

AU - Gholizadeh, V.

AU - Asadi, M.J.

AU - Ning, Y.

AU - Palego, Cristiano

AU - Hwang, J.C.M.

AU - Scarbrough, D.

AU - Goldsmith, C.L.

PY - 2016/3/16

Y1 - 2016/3/16

N2 - This paper reports a low-dispersion metamaterial-based 3-bit phase shifter which occupies an area of approximately 5 mm2 and uses only six microelectromechanical systems (MEMS) switches. The phase shifter is based on a coplanar slow-wave structure with defected ground and comprises three unit cells of 180°, 90° and 45° phase shifts, respectively. Each unit cell uses two single-pole-single-throw MEMS capacitive switches in series and parallel configurations, respectively, to switch between right-handed (low-pass) and left-handed (high-pass) states for the specified phase shift. Three-dimensional finite-element electromagnetic simulation was used to help optimize the compact layout. The worst-case performance across the band of 24-28 GHz was simulated to have less than 9° root-mean-square phase error, less than 1.7 dB insertion loss, and greater than 13 dB return loss.

AB - This paper reports a low-dispersion metamaterial-based 3-bit phase shifter which occupies an area of approximately 5 mm2 and uses only six microelectromechanical systems (MEMS) switches. The phase shifter is based on a coplanar slow-wave structure with defected ground and comprises three unit cells of 180°, 90° and 45° phase shifts, respectively. Each unit cell uses two single-pole-single-throw MEMS capacitive switches in series and parallel configurations, respectively, to switch between right-handed (low-pass) and left-handed (high-pass) states for the specified phase shift. Three-dimensional finite-element electromagnetic simulation was used to help optimize the compact layout. The worst-case performance across the band of 24-28 GHz was simulated to have less than 9° root-mean-square phase error, less than 1.7 dB insertion loss, and greater than 13 dB return loss.

KW - Phase shifters, Microswitches, Insertion loss, Micromechanical devices, Electrodes, Layout, Capacitance

U2 - 10.1109/IEEE-IWS.2016.7585412

DO - 10.1109/IEEE-IWS.2016.7585412

M3 - Conference contribution

BT - Wireless Symposium (IWS), 2016 IEEE MTT-S International

ER -