Low-dispersion metamaterial-based phase shifters with reduced size and number of MEMS switches
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Wireless Symposium (IWS), 2016 IEEE MTT-S International. 2016.
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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TY - GEN
T1 - Low-dispersion metamaterial-based phase shifters with reduced size and number of MEMS switches
AU - Gholizadeh, V.
AU - Asadi, M.J.
AU - Ning, Y.
AU - Palego, Cristiano
AU - Hwang, J.C.M.
AU - Scarbrough, D.
AU - Goldsmith, C.L.
PY - 2016/3/16
Y1 - 2016/3/16
N2 - This paper reports a low-dispersion metamaterial-based 3-bit phase shifter which occupies an area of approximately 5 mm2 and uses only six microelectromechanical systems (MEMS) switches. The phase shifter is based on a coplanar slow-wave structure with defected ground and comprises three unit cells of 180°, 90° and 45° phase shifts, respectively. Each unit cell uses two single-pole-single-throw MEMS capacitive switches in series and parallel configurations, respectively, to switch between right-handed (low-pass) and left-handed (high-pass) states for the specified phase shift. Three-dimensional finite-element electromagnetic simulation was used to help optimize the compact layout. The worst-case performance across the band of 24-28 GHz was simulated to have less than 9° root-mean-square phase error, less than 1.7 dB insertion loss, and greater than 13 dB return loss.
AB - This paper reports a low-dispersion metamaterial-based 3-bit phase shifter which occupies an area of approximately 5 mm2 and uses only six microelectromechanical systems (MEMS) switches. The phase shifter is based on a coplanar slow-wave structure with defected ground and comprises three unit cells of 180°, 90° and 45° phase shifts, respectively. Each unit cell uses two single-pole-single-throw MEMS capacitive switches in series and parallel configurations, respectively, to switch between right-handed (low-pass) and left-handed (high-pass) states for the specified phase shift. Three-dimensional finite-element electromagnetic simulation was used to help optimize the compact layout. The worst-case performance across the band of 24-28 GHz was simulated to have less than 9° root-mean-square phase error, less than 1.7 dB insertion loss, and greater than 13 dB return loss.
KW - Phase shifters, Microswitches, Insertion loss, Micromechanical devices, Electrodes, Layout, Capacitance
U2 - 10.1109/IEEE-IWS.2016.7585412
DO - 10.1109/IEEE-IWS.2016.7585412
M3 - Conference contribution
BT - Wireless Symposium (IWS), 2016 IEEE MTT-S International
ER -