Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures
Research output: Contribution to journal › Article › peer-review
Electronic versions
DOI
| Original language | English |
|---|---|
| Pages (from-to) | 164506 - 164506-5 |
| Journal | Journal of Applied Physics |
| Volume | 113 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 1 Apr 2013 |