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Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias

Research output: Contribution to conference › Paper

Standard Standard

Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias. / Mitchell, C.J.; Sly, J.L.; Missous, M. et al.
2003. Paper presented at Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK.

Research output: Contribution to conference › Paper

HarvardHarvard

Mitchell, CJ, Sly, JL, Missous, M, Banerjee, S & Shore, KA 2003, 'Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias', Paper presented at Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK, 3/01/01.

APA

Mitchell, C. J., Sly, J. L., Missous, M., Banerjee, S., & Shore, K. A. (2003). Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias. Paper presented at Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK.

CBE

Mitchell CJ, Sly JL, Missous M, Banerjee S, Shore KA. 2003. Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias. Paper presented at Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK.

MLA

Mitchell, C.J. et al. Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias. Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK, 03 Jan 0001, Paper, 2003.

VancouverVancouver

Mitchell CJ, Sly JL, Missous M, Banerjee S, Shore KA. Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias. 2003. Paper presented at Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK.

Author

Mitchell, C.J. ; Sly, J.L. ; Missous, M. et al. / Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias. Paper presented at Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK.

RIS

TY - CONF

T1 - Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias

AU - Mitchell, C.J.

AU - Sly, J.L.

AU - Missous, M.

AU - Banerjee, S.

AU - Shore, K.A.

PY - 2003/4/1

Y1 - 2003/4/1

M3 - Paper

T2 - Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK

Y2 - 3 January 0001

ER -