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Organic electronic memory based on a ferroelectric polymer

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Organic electronic memory based on a ferroelectric polymer. / Kalbitz, R.; Frübing, P.; Gerhard, R. et al.
In: Journal of Physics: Conference Series, Vol. 301, No. 1, 26.04.2013, p. 012055.

Research output: Contribution to journal › Article › peer-review

HarvardHarvard

Kalbitz, R, Frübing, P, Gerhard, R & Taylor, DM 2013, 'Organic electronic memory based on a ferroelectric polymer', Journal of Physics: Conference Series, vol. 301, no. 1, pp. 012055. https://doi.org/10.1088/1742-6596/301/1/012055

APA

Kalbitz, R., Frübing, P., Gerhard, R., & Taylor, D. M. (2013). Organic electronic memory based on a ferroelectric polymer. Journal of Physics: Conference Series, 301(1), 012055. https://doi.org/10.1088/1742-6596/301/1/012055

CBE

Kalbitz R, Frübing P, Gerhard R, Taylor DM. 2013. Organic electronic memory based on a ferroelectric polymer. Journal of Physics: Conference Series. 301(1):012055. https://doi.org/10.1088/1742-6596/301/1/012055

MLA

Kalbitz, R. et al. "Organic electronic memory based on a ferroelectric polymer". Journal of Physics: Conference Series. 2013, 301(1). 012055. https://doi.org/10.1088/1742-6596/301/1/012055

VancouverVancouver

Kalbitz R, Frübing P, Gerhard R, Taylor DM. Organic electronic memory based on a ferroelectric polymer. Journal of Physics: Conference Series. 2013 Apr 26;301(1):012055. doi: 10.1088/1742-6596/301/1/012055

Author

Kalbitz, R. ; Frübing, P. ; Gerhard, R. et al. / Organic electronic memory based on a ferroelectric polymer. In: Journal of Physics: Conference Series. 2013 ; Vol. 301, No. 1. pp. 012055.

RIS

TY - JOUR

T1 - Organic electronic memory based on a ferroelectric polymer

AU - Kalbitz, R.

AU - Frübing, P.

AU - Gerhard, R.

AU - Taylor, D.M.

PY - 2013/4/26

Y1 - 2013/4/26

N2 - Measurements of the capacitance of metal-insulator-semiconductor capacitors and the output characteristics of thin film transistors based on poly(3-hexylthiophene) as the active semiconductor and poly(vinylidenefluoride-trifluoroethylene) as the gate insulator show that ferroelectric polarisation in the insulator is stable but that its effect when poled by depletion voltages is partially neutralised by trapping of electrons at or near the semiconductor interface. Nevertheless, the combination of materials is capable of providing an adequate memory function.

AB - Measurements of the capacitance of metal-insulator-semiconductor capacitors and the output characteristics of thin film transistors based on poly(3-hexylthiophene) as the active semiconductor and poly(vinylidenefluoride-trifluoroethylene) as the gate insulator show that ferroelectric polarisation in the insulator is stable but that its effect when poled by depletion voltages is partially neutralised by trapping of electrons at or near the semiconductor interface. Nevertheless, the combination of materials is capable of providing an adequate memory function.

U2 - 10.1088/1742-6596/301/1/012055

DO - 10.1088/1742-6596/301/1/012055

M3 - Article

VL - 301

SP - 012055

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

ER -