Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor
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Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.
Original language | English |
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Pages (from-to) | article 183301 |
Journal | Applied Physics Letters |
Volume | 105 |
Issue number | 18 |
DOIs | |
Publication status | Published - 4 Nov 2014 |