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Pull-in and release transients of MEMS capacitive switches under high RF power

Research output: Contribution to conference › Paper

Standard Standard

Pull-in and release transients of MEMS capacitive switches under high RF power. / Palego, C.; Molinero, D.; Yaqing Ning, [No Value] et al.
2012. 437 - 440 Paper presented at 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012.

Research output: Contribution to conference › Paper

HarvardHarvard

Palego, C, Molinero, D, Yaqing Ning, NV, Xi Luo, NV, Hwang, JC & Goldsmith, CL 2012, 'Pull-in and release transients of MEMS capacitive switches under high RF power', Paper presented at 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012, 3/01/02 pp. 437 - 440.

APA

Palego, C., Molinero, D., Yaqing Ning, N. V., Xi Luo, N. V., Hwang, J. C., & Goldsmith, C. L. (2012). Pull-in and release transients of MEMS capacitive switches under high RF power. 437 - 440. Paper presented at 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012.

CBE

Palego C, Molinero D, Yaqing Ning NV, Xi Luo NV, Hwang JC, Goldsmith CL. 2012. Pull-in and release transients of MEMS capacitive switches under high RF power. Paper presented at 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012.

MLA

Palego, C. et al. Pull-in and release transients of MEMS capacitive switches under high RF power. 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012, 03 Jan 0002, Paper, 2012.

VancouverVancouver

Palego C, Molinero D, Yaqing Ning NV, Xi Luo NV, Hwang JC, Goldsmith CL. Pull-in and release transients of MEMS capacitive switches under high RF power. 2012. Paper presented at 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012.

Author

Palego, C. ; Molinero, D. ; Yaqing Ning, [No Value] et al. / Pull-in and release transients of MEMS capacitive switches under high RF power. Paper presented at 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012.

RIS

TY - CONF

T1 - Pull-in and release transients of MEMS capacitive switches under high RF power

AU - Palego, C.

AU - Molinero, D.

AU - Yaqing Ning, [No Value]

AU - Xi Luo, [No Value]

AU - Hwang, J.C.

AU - Goldsmith, C.L.

PY - 2012/10/29

Y1 - 2012/10/29

N2 - For the first time, both pull-in and release transients were characterized under high RF power levels on electrostatically actuated capacitive switches that exhibited little ambient temperature dependence under small-signal conditions. In spite of the complication of buckling, thermal resistances and time constants were extracted for both pulled-in and released states. In the pulled-in state, the extracted thermal resistance and time constant were approximately 5000°C/W and 40μs, respectively. In the released state, the corresponding values were approximately 3000°C/W and 100μs, respectively. These extracted parameters could serve as the foundation for physical understanding, as well as compact modeling of large-signal transients. They could also help improve the design of switches that are more robust against temperature change and RF loading.

AB - For the first time, both pull-in and release transients were characterized under high RF power levels on electrostatically actuated capacitive switches that exhibited little ambient temperature dependence under small-signal conditions. In spite of the complication of buckling, thermal resistances and time constants were extracted for both pulled-in and released states. In the pulled-in state, the extracted thermal resistance and time constant were approximately 5000°C/W and 40μs, respectively. In the released state, the corresponding values were approximately 3000°C/W and 100μs, respectively. These extracted parameters could serve as the foundation for physical understanding, as well as compact modeling of large-signal transients. They could also help improve the design of switches that are more robust against temperature change and RF loading.

M3 - Paper

SP - 437

EP - 440

T2 - 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012

Y2 - 3 January 0002

ER -