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Separating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitors. / Taylor, D.M.; Alves, N.
In: Journal of Applied Physics, Vol. 103, No. 5, 10.03.2008, p. 054509.

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Taylor DM, Alves N. Separating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitors. Journal of Applied Physics. 2008 Mar 10;103(5):054509. doi: 10.1063/1.2844435

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Taylor, D.M. ; Alves, N. / Separating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitors. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 5. pp. 054509.

RIS

TY - JOUR

T1 - Separating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitors

AU - Taylor, D.M.

AU - Alves, N.

PY - 2008/3/10

Y1 - 2008/3/10

KW - PHYSICS

KW - APPLIED

U2 - 10.1063/1.2844435

DO - 10.1063/1.2844435

M3 - Article

VL - 103

SP - 054509

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -