Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
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Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.
| Original language | English |
|---|---|
| Pages (from-to) | 033303 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1 Jan 2011 |