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  • Wudmir Rojas
  • Allen Winter
  • James Grote
    Air Force Research Laboratory
  • S.S. Kim
    Synchrotron Research Inc
  • Rajesh R. Naik
    Air Force Research Laboratory
  • A.D. Williams
    Air Force Research Laboratory
  • Conan Weiland
    Synchrotron Research Inc
  • Edward Principe
    Synchrotron Research Inc
  • D.A. Fischer
    National Institute of Standards and Technology
  • Sarbajit Banerjee
    Texas A&M University
  • D. Prendergast
    Lawrence Berkeley National Laboratory
  • Eva Campo
As the quest towards novel materials proceeds, improved characterization technologies are needed. In particular, the atomic thickness in graphene and other 2D materials renders some conventional technologies obsolete. Characterization technologies at wafer levels are needed with enough sensitivity to detect strain in order to inform fabrication. In this work, NEXAFS spectroscopy was combined with simulations to predict lattice parameters of graphene grown on copper and further transferred to a variety of substrates. The strains associated with the predicted lattice parameters are in agreement with experimental findings. The approach presented here holds promise to effectively measure strain in graphene and other 2D systems at wafer levels to inform manufacturing environments.
Original languageEnglish
Pages (from-to)1783-1794
JournalLangmuir
Volume34
Issue number4
Early online date29 Dec 2017
DOIs
Publication statusPublished - 2018
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