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Strain and bond length dynamics upon growth and transfer of graphene by NEXAFS spectroscopy from first principles and experiment. / Rojas, Wudmir; Winter, Allen; Grote, James et al.
In: Langmuir, Vol. 34, No. 4, 2018, p. 1783-1794.

Research output: Contribution to journalArticlepeer-review

HarvardHarvard

Rojas, W, Winter, A, Grote, J, Kim, SS, Naik, RR, Williams, AD, Weiland, C, Principe, E, Fischer, DA, Banerjee, S, Prendergast, D & Campo, E 2018, 'Strain and bond length dynamics upon growth and transfer of graphene by NEXAFS spectroscopy from first principles and experiment', Langmuir, vol. 34, no. 4, pp. 1783-1794. https://doi.org/10.1021/acs.langmuir.7b03260

APA

Rojas, W., Winter, A., Grote, J., Kim, S. S., Naik, R. R., Williams, A. D., Weiland, C., Principe, E., Fischer, D. A., Banerjee, S., Prendergast, D., & Campo, E. (2018). Strain and bond length dynamics upon growth and transfer of graphene by NEXAFS spectroscopy from first principles and experiment. Langmuir, 34(4), 1783-1794. https://doi.org/10.1021/acs.langmuir.7b03260

CBE

Rojas W, Winter A, Grote J, Kim SS, Naik RR, Williams AD, Weiland C, Principe E, Fischer DA, Banerjee S, et al. 2018. Strain and bond length dynamics upon growth and transfer of graphene by NEXAFS spectroscopy from first principles and experiment. Langmuir. 34(4):1783-1794. https://doi.org/10.1021/acs.langmuir.7b03260

MLA

VancouverVancouver

Rojas W, Winter A, Grote J, Kim SS, Naik RR, Williams AD et al. Strain and bond length dynamics upon growth and transfer of graphene by NEXAFS spectroscopy from first principles and experiment. Langmuir. 2018;34(4):1783-1794. Epub 2017 Dec 29. doi: 10.1021/acs.langmuir.7b03260

Author

Rojas, Wudmir ; Winter, Allen ; Grote, James et al. / Strain and bond length dynamics upon growth and transfer of graphene by NEXAFS spectroscopy from first principles and experiment. In: Langmuir. 2018 ; Vol. 34, No. 4. pp. 1783-1794.

RIS

TY - JOUR

T1 - Strain and bond length dynamics upon growth and transfer of graphene by NEXAFS spectroscopy from first principles and experiment

AU - Rojas, Wudmir

AU - Winter, Allen

AU - Grote, James

AU - Kim, S.S.

AU - Naik, Rajesh R.

AU - Williams, A.D.

AU - Weiland, Conan

AU - Principe, Edward

AU - Fischer, D.A.

AU - Banerjee, Sarbajit

AU - Prendergast, D.

AU - Campo, Eva

PY - 2018

Y1 - 2018

N2 - As the quest towards novel materials proceeds, improved characterization technologies are needed. In particular, the atomic thickness in graphene and other 2D materials renders some conventional technologies obsolete. Characterization technologies at wafer levels are needed with enough sensitivity to detect strain in order to inform fabrication. In this work, NEXAFS spectroscopy was combined with simulations to predict lattice parameters of graphene grown on copper and further transferred to a variety of substrates. The strains associated with the predicted lattice parameters are in agreement with experimental findings. The approach presented here holds promise to effectively measure strain in graphene and other 2D systems at wafer levels to inform manufacturing environments.

AB - As the quest towards novel materials proceeds, improved characterization technologies are needed. In particular, the atomic thickness in graphene and other 2D materials renders some conventional technologies obsolete. Characterization technologies at wafer levels are needed with enough sensitivity to detect strain in order to inform fabrication. In this work, NEXAFS spectroscopy was combined with simulations to predict lattice parameters of graphene grown on copper and further transferred to a variety of substrates. The strains associated with the predicted lattice parameters are in agreement with experimental findings. The approach presented here holds promise to effectively measure strain in graphene and other 2D systems at wafer levels to inform manufacturing environments.

U2 - 10.1021/acs.langmuir.7b03260

DO - 10.1021/acs.langmuir.7b03260

M3 - Article

VL - 34

SP - 1783

EP - 1794

JO - Langmuir

JF - Langmuir

SN - 0743-7463

IS - 4

ER -