The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors
Research output: Contribution to journal › Article › peer-review
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DOI
Keywords
- PHYSICS, APPLIED
| Original language | English |
|---|---|
| Pages (from-to) | 641-647 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 44 |
| Issue number | 1B |
| DOIs | |
| Publication status | Published - 1 Jan 2005 |