TY - CONF

T1 - Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches

AU - Goldsmith, C.

AU - Sumant, A.

AU - Auciello, O.

AU - Carlisle, J.A.

AU - Zeng, H.

AU - Hwang, J.

AU - Palego, C.

AU - Wang, W.

AU - Carpick, R.

AU - Adiga, V.P.

AU - Datta, A.

AU - Gudeman, C.

AU - O'Brien, S.

AU - Sampath, S.

PY - 2010/5/23

Y1 - 2010/5/23

N2 - Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.

AB - Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.

U2 - 10.1109/MWSYM.2010.5517781

DO - 10.1109/MWSYM.2010.5517781

M3 - Paper

SP - 1246

EP - 1249

T2 - Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010

Y2 - 3 January 0001

ER -