Standard Standard

Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches. / Goldsmith, C.; Sumant, A.; Auciello, O.; Carlisle, J.A.; Zeng, H.; Hwang, J.; Palego, C.; Wang, W.; Carpick, R.; Adiga, V.P.; Datta, A.; Gudeman, C.; O'Brien, S.; Sampath, S.

2010. 1246-1249 Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010, .

Research output: Contribution to conferencePaper

HarvardHarvard

Goldsmith, C, Sumant, A, Auciello, O, Carlisle, JA, Zeng, H, Hwang, J, Palego, C, Wang, W, Carpick, R, Adiga, VP, Datta, A, Gudeman, C, O'Brien, S & Sampath, S 2010, 'Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches' Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010, 3/01/01, pp. 1246-1249. https://doi.org/10.1109/MWSYM.2010.5517781

APA

Goldsmith, C., Sumant, A., Auciello, O., Carlisle, J. A., Zeng, H., Hwang, J., ... Sampath, S. (2010). Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches. 1246-1249. Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010, . https://doi.org/10.1109/MWSYM.2010.5517781

CBE

Goldsmith C, Sumant A, Auciello O, Carlisle JA, Zeng H, Hwang J, Palego C, Wang W, Carpick R, Adiga VP, Datta A, Gudeman C, O'Brien S, Sampath S. 2010. Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches. Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010, . https://doi.org/10.1109/MWSYM.2010.5517781

MLA

VancouverVancouver

Goldsmith C, Sumant A, Auciello O, Carlisle JA, Zeng H, Hwang J et al. Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches. 2010. Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010, . https://doi.org/10.1109/MWSYM.2010.5517781

Author

Goldsmith, C. ; Sumant, A. ; Auciello, O. ; Carlisle, J.A. ; Zeng, H. ; Hwang, J. ; Palego, C. ; Wang, W. ; Carpick, R. ; Adiga, V.P. ; Datta, A. ; Gudeman, C. ; O'Brien, S. ; Sampath, S. / Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches. Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010, .

RIS

TY - CONF

T1 - Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches

AU - Goldsmith, C.

AU - Sumant, A.

AU - Auciello, O.

AU - Carlisle, J.A.

AU - Zeng, H.

AU - Hwang, J.

AU - Palego, C.

AU - Wang, W.

AU - Carpick, R.

AU - Adiga, V.P.

AU - Datta, A.

AU - Gudeman, C.

AU - O'Brien, S.

AU - Sampath, S.

PY - 2010/5/23

Y1 - 2010/5/23

N2 - Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.

AB - Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.

U2 - 10.1109/MWSYM.2010.5517781

DO - 10.1109/MWSYM.2010.5517781

M3 - Paper

SP - 1246

EP - 1249

ER -