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Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches

Research output: Contribution to conference › Paper

Standard Standard

Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches. / Goldsmith, C.; Sumant, A.; Auciello, O. et al.
2010. 1246-1249 Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010.

Research output: Contribution to conference › Paper

HarvardHarvard

Goldsmith, C, Sumant, A, Auciello, O, Carlisle, JA, Zeng, H, Hwang, J, Palego, C, Wang, W, Carpick, R, Adiga, VP, Datta, A, Gudeman, C, O'Brien, S & Sampath, S 2010, 'Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches', Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010, 3/01/01 pp. 1246-1249. https://doi.org/10.1109/MWSYM.2010.5517781

APA

Goldsmith, C., Sumant, A., Auciello, O., Carlisle, J. A., Zeng, H., Hwang, J., Palego, C., Wang, W., Carpick, R., Adiga, V. P., Datta, A., Gudeman, C., O'Brien, S., & Sampath, S. (2010). Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches. 1246-1249. Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010. https://doi.org/10.1109/MWSYM.2010.5517781

CBE

Goldsmith C, Sumant A, Auciello O, Carlisle JA, Zeng H, Hwang J, Palego C, Wang W, Carpick R, Adiga VP, et al. 2010. Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches. Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010. https://doi.org/10.1109/MWSYM.2010.5517781

MLA

Goldsmith, C. et al. Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches. Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010, 03 Jan 0001, Paper, 2010. https://doi.org/10.1109/MWSYM.2010.5517781

VancouverVancouver

Goldsmith C, Sumant A, Auciello O, Carlisle JA, Zeng H, Hwang J et al.. Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches. 2010. Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010. doi: 10.1109/MWSYM.2010.5517781

Author

Goldsmith, C. ; Sumant, A. ; Auciello, O. et al. / Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches. Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010.

RIS

TY - CONF

T1 - Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches

AU - Goldsmith, C.

AU - Sumant, A.

AU - Auciello, O.

AU - Carlisle, J.A.

AU - Zeng, H.

AU - Hwang, J.

AU - Palego, C.

AU - Wang, W.

AU - Carpick, R.

AU - Adiga, V.P.

AU - Datta, A.

AU - Gudeman, C.

AU - O'Brien, S.

AU - Sampath, S.

PY - 2010/5/23

Y1 - 2010/5/23

N2 - Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.

AB - Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.

U2 - 10.1109/MWSYM.2010.5517781

DO - 10.1109/MWSYM.2010.5517781

M3 - Paper

SP - 1246

EP - 1249

T2 - Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010

Y2 - 3 January 0001

ER -