TY - JOUR

T1 - Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers

AU - Fan, Yuanlong

AU - Zhang, Jing

AU - Shore, K. Alan

PY - 2024/11/5

Y1 - 2024/11/5

N2 - It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In addition, a detailed examination is also made of the emission patterns of the structure. It is found that a trade-off emerges between threshold gain and beam quality where multi-lobed far field emission may be associated with the lowest threshold gains.

AB - It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In addition, a detailed examination is also made of the emission patterns of the structure. It is found that a trade-off emerges between threshold gain and beam quality where multi-lobed far field emission may be associated with the lowest threshold gains.

KW - coupled nano-lasers

KW - semiconductor nano-lasers

KW - threshold gain

U2 - 10.3390/photonics11111037

DO - 10.3390/photonics11111037

M3 - Article

VL - 11

JO - Photonics

JF - Photonics

SN - 2304-6732

IS - 11

M1 - 1037

ER -