Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
StandardStandard
Yn: Photonics, Cyfrol 11, Rhif 11, 1037, 05.11.2024.
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
HarvardHarvard
APA
CBE
MLA
VancouverVancouver
Author
RIS
TY - JOUR
T1 - Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers
AU - Fan, Yuanlong
AU - Zhang, Jing
AU - Shore, K. Alan
PY - 2024/11/5
Y1 - 2024/11/5
N2 - It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In addition, a detailed examination is also made of the emission patterns of the structure. It is found that a trade-off emerges between threshold gain and beam quality where multi-lobed far field emission may be associated with the lowest threshold gains.
AB - It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In addition, a detailed examination is also made of the emission patterns of the structure. It is found that a trade-off emerges between threshold gain and beam quality where multi-lobed far field emission may be associated with the lowest threshold gains.
U2 - 10.3390/photonics11111037
DO - 10.3390/photonics11111037
M3 - Article
VL - 11
JO - Photonics
JF - Photonics
SN - 2304-6732
IS - 11
M1 - 1037
ER -