Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers

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Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers. / Fan, Yuanlong; Zhang, Jing; Shore, K. Alan.
In: Photonics, Vol. 11, No. 11, 1037, 05.11.2024.

Research output: Contribution to journalArticlepeer-review

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Fan Y, Zhang J, Shore KA. Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers. Photonics. 2024 Nov 5;11(11):1037. doi: 10.3390/photonics11111037

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Fan, Yuanlong ; Zhang, Jing ; Shore, K. Alan. / Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers. In: Photonics. 2024 ; Vol. 11, No. 11.

RIS

TY - JOUR

T1 - Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers

AU - Fan, Yuanlong

AU - Zhang, Jing

AU - Shore, K. Alan

PY - 2024/11/5

Y1 - 2024/11/5

N2 - It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In addition, a detailed examination is also made of the emission patterns of the structure. It is found that a trade-off emerges between threshold gain and beam quality where multi-lobed far field emission may be associated with the lowest threshold gains.

AB - It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In addition, a detailed examination is also made of the emission patterns of the structure. It is found that a trade-off emerges between threshold gain and beam quality where multi-lobed far field emission may be associated with the lowest threshold gains.

U2 - 10.3390/photonics11111037

DO - 10.3390/photonics11111037

M3 - Article

VL - 11

JO - Photonics

JF - Photonics

SN - 2304-6732

IS - 11

M1 - 1037

ER -