Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
Fersiynau electronig
Dogfennau
- tandemnanolaserphotonics-11-01037
Fersiwn derfynol wedi’i chyhoeddi, 6.02 MB, dogfen-PDF
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Dolenni
Dangosydd eitem ddigidol (DOI)
It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In addition, a detailed examination is also made of the emission patterns of the structure. It is found that a trade-off emerges between threshold gain and beam quality where multi-lobed far field emission may be associated with the lowest threshold gains.
Allweddeiriau
| Iaith wreiddiol | Saesneg |
|---|---|
| Rhif yr erthygl | 1037 |
| Cyfnodolyn | Photonics |
| Cyfrol | 11 |
| Rhif y cyfnodolyn | 11 |
| Dyddiad ar-lein cynnar | 5 Tach 2024 |
| Dynodwyr Gwrthrych Digidol (DOIs) | |
| Statws | Cyhoeddwyd - 5 Tach 2024 |