Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers
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- tandemnanolaserphotonics-11-01037
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It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In addition, a detailed examination is also made of the emission patterns of the structure. It is found that a trade-off emerges between threshold gain and beam quality where multi-lobed far field emission may be associated with the lowest threshold gains.
| Original language | English |
|---|---|
| Article number | 1037 |
| Journal | Photonics |
| Volume | 11 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 5 Nov 2024 |